Cuijin's SiC MOSFETs feature optimized cell structure for enhanced avalanche resistance. They exhibit low conduction and switching losses, stable on-resistance with temperature variations, minimal threshold voltage drift, and excellent consistency across parameters such as threshold voltage, on-resistance, and switching losses. Our SiC Diodes also demonstrate superior reverse recovery characteristics, low forward voltage drop, and low losses. Our devices are well-suited to the high-frequency and high-power-density performance requirements of high-power power supplies.
Application Schematic Diagram
Typical Topology Diagram
SiC MOSFET
Product | Package | VDSmax | RDS(on) typ | VGS(th) max | ID @25℃ max | QG | Ciss | Coss |
BCZ120N21M1 | TO247-4 | 1200V | 21mΩ | 4.5V | 100A | 198nC | 3741pF | 224pF |
BCW120N21M1 | TO247-3 | 1200V | 21mΩ | 4.5V | 100A | 209nC | 3683pF | 225pF |
BCZ120N40M1 | TO247-4 | 1200V | 40mΩ | 4.5V | 60A | 109nC | 1960pF | 125pF |
BCZ120N80M1 | TO247-4 | 1200V | 80mΩ | 4.5V | 30A | 52nC | 880pF | 64pF |
BCW120N80M1 | TO247-3 | 1200V | 80mΩ | 4.5V | 30A | 209nC | 3683pF | 225pF |
BCBF120N80M1 | TO263-7 | 1200V | 80mΩ | 4.5V | 30A | 50nC | 880pF | 64pF |
SJ MOSFET
Product | Package | VDSmax | RDS (on) typ | VGS (th) max | ID @25℃ max | QG | Ciss | Coss |
BMW65N045E1 | TO247-3 | 650V | 45mΩ | 5V | 62.6A | 142nC | 5451pF | 135pF |
BMT65N076C1 | TOLL | 650V | 76mΩ | 5V | 52A | 80nC | 3440pF | 162pF |
BMW65N076C1 | TO247-3 | 650V | 76mΩ | 5V | 52A | 80nC | 3440pF | 162pF |
BMB65N076C1 | D²PAK | 650V | 76mΩ | 5V | 52A | 80nC | 3440pF | 162pF |
BMP65N100C1 | TO220 | 650V | 100mΩ | 5V | 35A | 66nC | 2990pF | 141pF |
BMT65N100C1 | TOLL | 650V | 100mΩ | 5V | 35A | 66nC | 2990pF | 141pF |
BMW65N100C1 | TO247-3 | 650V | 100mΩ | 5V | 35A | 66nC | 2990pF | 141pF |
BML65N210S1Z | DFN8*8 | 650V | 230mΩ | 4V | 17.1A | 40nC | 1750pF | 39pF |
BMF65N340C1 | TO220F | 650V | 240mΩ | 4.5V | 14A | 20.4nC | 781pF | 30.3pF |
BMD65N340C1 DPAK | DPAK | 650V | 340mΩ | 4.5V | 14A | 20.4nC | 781pF | 30.3pF |
BML65N340C1 | DFN8*8 | 650V | 340mΩ | 4.5V | 14A | 20.4nC | 781pF | 30.3pF |
BMD65N380C1 | DPAK | 650V | 380mΩ | 4V | 10.5A | 23.5nC | 630pF | 33pF |
BMF65N380C1 | TO220F | 650V | 380mΩ | 4V | 10.5A | 23.5nC | 630pF | 33pF |
SiC Diode
Product | Package | VRRM | IF | IFSM | VF typ | VF max | IR max | QG |
BCA120S015D1 | TO247-2 | 1200V | 15A | 106A | 1.39V | 1.7V | 100uA | 92nC |
BCA120S015D2 | TO247-2 | 1200V | 15A | 100A | 1.43V | 1.7V | 100uA | 83nC |
BCA120S020D1 | TO247-2 | 1200V | 20A | 135A | 1.39V | 1.7V | 100uA | 121nC |
BCH120S020D1 | TO220-2 | 1200V | 20A | 135A | 1.39V | 1.7V | 100uA | 121nC |
BCA120S020D2 | TO247-2 | 1200V | 20A | 110A | 1.45V | 1.7V | 150uA | 98nC |
BCW120D030D1 | TO247-3 | 1200V | 30A | 106A | 1.39V | 1.7V | 100uA | 92nC |
BCA120S030D2 | TO247-2 | 1200V | 30A | 195A | 1.5V | 1.7V | 150uA | 174nC |
BCA120S040D1 | TO247-2 | 1200V | 40A | 225A | 1.39V | 1.7V | 100uA | 241nC |
BCW120D040D1 | TO247-3 | 1200V | 40A | 106A | 1.39V | 1.7V | 100uA | 92nC |
BCA120S040D2 | TO247-2 | 1200V | 40A | 249A | 1.5V | 1.7V | 150uA | 213nC |
