SIC DIODE
Product Features:
Excellent robustness;
Good switching characteristics are applicable to both hard and soft switches;
Significantly reduce switching and conduction losses:
Suitable for both hard and soft switches (PFC and LLC):
In applications at the PFC and PWM levels, the trend towards low ringing facilitates ease of use and rapid design:
Due to low switching and conduction losses, thermal management is simplified,
Suitable for various applications and power ranges:
The SJMOS from Cuijin, a novel superjunction technology, opens a door of high efficiency and ease of use for power circuit design, enabling us to provide cost-effective, reliable, and robust solutions for AC/DC and DC/DC applications such as PFC and soft switching. The breakdown voltage of SJMOS ranges from 600 V to 650 V, offering a variety of packaging options
| Product Name | VDS MAX | RDS(on)max | VRRM | IF | IFSM | VF typ | IR typ | Qc | Package | Download | Details |
|---|---|---|---|---|---|---|---|---|---|---|---|
| BMF60N190C1 | 650V | 28mΩ | 650V | 3A | 32A | 1.5V | 0.5μA | 7.4nC | TO247-4 | Product Manual.pdf | View detail » |
| BMF60N190C1 | 650V | 28mΩ | 650V | 3A | 32A | 1.5V | 0.5μA | 7.4nC | TO247-4 | Product Manual.pdf | View detail » |
| BCA65S10D3 650V 10A SiC Schottky Diode | View detail » | ||||||||||
| BCH65S04D4 650V 4A SiC Schottky Diode | View detail » | ||||||||||
| BCM65S04D3 650V 4A SiC Schottky Diode | View detail » |