In terms of product portfolio, Bestirpower offers a comprehensive voltage platform ranging from 30V to 2000V. Its products include silicon-based ultra-thin SGT MOSFETs, super junction (SJ) MOSFETs, IGBT discrete devices and modules, as well as third-generation silicon carbide (SiC) MOSFETs and modules. The company also provides advanced co-packaged power devices and board-level system solutions.

From an operational perspective, Bestirpower is currently establishing a specialized backend wafer processing line for ultra-thin wafers, covering key processes such as electroless plating, wafer thinning, ion implantation, annealing, and dicing. The company plans to adopt a Smart IDM model in the future. Meanwhile, it offers partners a one-stop “FSM + BGBM” backend solution, benchmarking against leading international technologies. Through customized backside metallization and wafer thinning processes, Bestirpower ensures superior performance and cost efficiency, enhancing overall market competitiveness.

The company’s R&D center is located in Shanghai, with application and sales centers in Shanghai, Shenzhen, Wuhan, and Xi’an. Its manufacturing base is situated in the Cixi High-tech Zone, Ningbo, where a 42,000 m² power semiconductor fabrication facility is currently under construction.

Bestirpower offers a wide voltage range (30V–2000V) covering SGT MOSFETs, SJ MOSFETs, IGBTs, and SiC devices, enabling customers to source multiple solutions from a single supplier across diverse industrial and new energy applications.

With deep expertise in device design and advanced backend processes , Bestirpower provides tailored solutions to meet specific performance, efficiency, and application requirements.

By optimizing device structure and process technology, Bestirpower delivers a strong balance of reliability, performance, and competitive pricing, helping customers enhance product competitiveness in demanding markets.