Bestirpower’s SiC MPS diodes combine the advantages of Schottky and PiN diode structures, delivering low forward voltage drop, low reverse leakage current, and robust surge capability. They achieve low VF and QC in both low- and high-frequency applications, ensuring high efficiency across operating conditions.

Bestirpower SiC modules deliver ultra-fast switching, low losses, and high-frequency performance. Designed for high-temperature, high-humidity, and biased operation, they feature zero tail current, fail-safe normally-off operation, integrated NTC sensing, and AlN insulation with copper baseplates. Ideal for SMPS, inverters, UPS, and servo drives.

SiC MOSFETs deliver higher system efficiency, fast switching with low losses, and strong avalanche and surge capability. With low Eoss, low FOM, and an ultra-fast body diode, they enable high-frequency operation, compact design, and improved reliability. All devices are 100% wafer-level burn-in tested, ensuring excellent consistency and stability.

Bestirpower’s SJ MOSFETs deliver excellent robustness, optimized switching for both hard- and soft-switching (PFC/LLC), and significantly reduced switching and conduction losses. With low ringing for easier, faster design and simplified thermal management, they enable efficient, reliable, and cost-effective AC/DC and DC/DC solutions. The portfolio covers 600–650V with multiple package options.

Bestirpower TMBS diodes, built on 12-inch fab technology, offer superior uniformity, reliability, and competitive cost. They deliver lower VF at the same VR (e.g., <0.46V @30A) and support future 45–100V options. With low forward drop and high efficiency, they are ideal for rectification, freewheeling, and protection in adapters, SMPS, chargers, and PV systems, reducing heat and size.

Leveraging advanced super junction and SiC technologies, Bestirpower develops SJ MOSFET, SiC Schottky diode, and SiC MOSFET bare dies and wafers.

Bestirpower SGT MOSFETs feature a deep trench shielded-gate design with low Rds(on), low gate charge, and reduced Miller capacitance for minimal switching loss. Covering 30V–200V, they offer high efficiency, >200kHz switching, strong SOA robustness, and stable thermal performance. Ideal for power supplies, new energy, and industrial drives, enabling compact, reliable designs.

Bestirpower IGBT modules offer high power control, low inductance, low switching loss, and excellent reliability with strong short-circuit tolerance. Compact and flexible for series or parallel use, they support various current and voltage ratings across chopper, inverter, rectifier, six-pack, and three-level topologies, ideal for PV inverters, motor drives, UPS, and high-frequency applications.

Bestirpower IGBT transistors feature high parameter consistency, excellent reliability, and strong short-circuit tolerance. Optimized Vcesat, Eon, and Eoff reduce switching losses, improve efficiency, and enable higher power density, providing customers with efficient, reliable, and flexible power control solutions.