 |
Benefits
• Higher System Efficiency
• Reduced Cooling Requirements
• Increased Power Density
• Increased System Switching Frequency
Applications
• Solar Inverters
• Switch Mode Power Supplies
• High Voltage DC/DC Converters
• Battery Chargers
• Motor Drives
• Pulsed Power applications
Features
BVDSS, Tc=25℃ | IID, Tc=25℃ | RDS(on),typ | Qg,typ |
1200 V | 22 A | 160 mΩ | 40 nC |
• High Blocking Voltage with Low On-Resistance
• High Speed Switching with Low Capacitances
• Easy to Parallel and Simple to Drive
• Avalanche Ruggedness
• Halogen Free, RoHS Compliant
Absolute Maximum Ratings (TJ=25°C unless otherwise noted)
Symbol | Parameter | Test Conditions | Value | Unit |
VDSmax | Drain - Source Voltage | V₍GS₎=0V, I₍D₎=100μA | 1200 | V |
VGSmax | Gate - Source Voltage | Absolute maximum values | -8 / +22 | V |
VGSop | Gate - Source Voltage | Recommended operational values | -5 / +18 | V |
ID | Continuous Drain Current | VGS=18V, TC=25°C | 22 | A |
VGS=18V, TC=100°C | 16 | A | ||
IDM | Pulse Drain Current | Pulse width limited by T₍Jmax₎ | 58 | A |
PD | Power Dissipation | (TC=25°C) | 126 | W |
Derate Above 25°C | 0.84 | W/°C | ||
TJ, TSTG | Operating Junction and Storage Temperature | - | -55 to 175 | °C |
Thermal Characteristics
Symbol | Parameter | Value | Unit |
RθJC | Thermal Resistance, Junction to Case, Max. | 1.19 | °C/W |
RθJA | Thermal Resistance, Junction to Ambient, Max. | 27.47 | °C/W |
Tsold | Soldering temperature, wave soldering only allowed at leads | 260 | °C |
Electrical Characteristics (TJ=25°C, Note1)
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| BVDSS | Drain to Source Breakdown Voltage | VGS= 0 V, ID=100 μA | 1200 | - | - | V |
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID=5.0 mA, TC=25°C | 2.0 | 3.4 | 4.0 | V |
| VGS = VDS, ID=5.0 mA, TC=150°C | - | 2.7 | - | |||
| IDSS | Zero Gate Voltage Drain Current | VDS= 1200 V, VGS= 0 V | - | 10 | 100 | μA |
| IGSS | Gate-Source Leakage Current | VGS= 18 V, VDS= 0 V | - | 10 | 200 | nA |
| RDS(on) | Static Drain to Source On Resistance | VGS= 18 V, ID= 10 A,TC= 25°C | - | 130 | 180 | mΩ |
| VGS= 15 V, ID= 10 A,TC= 25°C | - | 160 | 190 | |||
| VGS= 18 V, ID= 10 A,TC= 150°C | - | 230 | - | |||
| gfs | Transconductance | VGS= 18 V, ID= 10 A,TJ= 25°C | - | 6.2 | - | S |
| VGS= 18 V, ID= 10 A,TJ= 150°C | - | 3.7 | - | |||
| Ciss | Input Capacitance | VGS=0V, VDS=800 V, f=1MHz, VAC=25 mV | - | 818 | - | pF |
| Coss | Output Capacitance | - | 41 | - | ||
| Crss | Reverse Transfer Capacitance | - | 8 | - | ||
| EON | Turn-OnSwitching Energy | VDS=800V, VGS= -5/18V,ID= 10A, RG(ext)= 0Ω, L= 256μH | - | 200 | - | μJ |
| EOFF | Turn-Off Switching Energy | - | 50 | - | ||
| td(on) | Turn-On Delay Time | VDS=800V, VGS= -5/18V,ID= 100A, RG(ext)= 0Ω, Timing relative to VDS | - | 20 | - | ns |
| tr | Rise Time | - | 45 | - | ||
| td(off) | Turn-Off Delay Time | - | 20 | - | ||
| tf | Fall Time | - | 15 | - | ||
| RG(inf) | Internal Gate Resistance | f=1 MHz, VAC=25mV open drain | - | 10.0 | - | Ω |
| Qgs | Gate to Source Charge | VDD=800V, VGS= -5/18V,ID= 10A | - | 9.6 | - | nC |
| Qgd | Gate to Drain Charge | - | 19 | - | ||
| Qg | Total Gate Charge | - | 40 | - |
Reverse Diode Characteristics
Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
VSD | Diode Forward Voltage | VGS=-5 V, ISD=5 A, TJ=25°C | - | 3.7 | - | V |
VGS=-5 V, ISD=5 A, TJ=150°C | - | 3.2 | - | V | ||
IS | Continuous Diode Forward Current | T₍C₎=25°C | - | - | 30 | A |
trr | Reverse Recovery time | VGS=-5V, ISD=10 A, VR=800V, dif /dt=1200A/μs | - | 10 | - | ns |
Qrr | Reverse Recovery Charge | - | 40 | - | nC | |
Irrm | Peak Reverse Recovery Current | - | 3 | - | A |
※. Note 1 : Limited by maximum junction temperature.
Typical Performance Characteristics
Figure1. On-Region Characteristics TJ=25℃
Figure2. On-Region Characteristics TJ=150℃
Figure3. On-Resistance Characteristics vs.Temperature
Figure4. Transfer Characteristics
Figure5. Diode Forward Voltage Characteristics vs. Source-Drain Current TJ=25℃
Figure6.Diode Forward Voltage Characteristics vs. Source-Drain Current TJ=150℃
Figure 7. Threshold Voltage vs. Temperature
Figure 8. Gate Charge Characteristics
Figure9. Stored Energy in Output Capacitance
Figure 10. Capacitance Characteristics
Figure 11. Maximum Power Dissipation Derating vs. Case Temperature
Figure 12. Maximum Safe Operating Area
Figure 13. Transient Thermal Response Curve
Figure 14. Inductive Load Switching Test Circuit and Waveforms
Figure 15. Peak Diode Recovery dv/dt Test Circuit and Waveforms
Package Outlines DFN 8*8
Symbol | Dimensions In Willimeters | ||
Min | Nom | Max | |
D | 7.90 | 8.00 | 8.10 |
E | 7.90 | 8.00 | 8.10 |
D2 | 7.10 | 7.20 | 7.30 |
E2 | 4.25 | 4.35 | 4.45 |
e | 2.00BSC | ||
E3 | 0.75REF | ||
E4 | 2.75REF | ||
Ne | 6.00BSC | ||
b | 0.95 | 1.00 | 1.05 |
A | 0.70 | 0.75 | 0.80 |
c | 0.203REF | ||
A1 | 0 | / | 0.050 |
L | 0.40 | 0.50 | 0.55 |
Package Marking and Ordering Information
Part Number | Top Marking | Package | Packing Method | Quantity |
BCL120N160W1 | BCL120N160W1 | DFN8*8 | Tape & Reel | 5000 units |
Benefits
• Higher System Efficiency
• Reduced Cooling Requirements
• Increased Power Density
• Increased System Switching Frequency
Applications
• Solar Inverters
• Switch Mode Power Supplies
• High Voltage DC/DC Converters
• Battery Chargers
• Motor Drives
• Pulsed Power applications
Features
BVDSS, Tc=25℃ | IID, Tc=25℃ | RDS(on),typ | Qg,typ |
1200 V | 22 A | 160 mΩ | 40 nC |
• High Blocking Voltage with Low On-Resistance
• High Speed Switching with Low Capacitances
• Easy to Parallel and Simple to Drive
• Avalanche Ruggedness
• Halogen Free, RoHS Compliant
Absolute Maximum Ratings (TJ=25°C unless otherwise noted)
Symbol | Parameter | Test Conditions | Value | Unit |
VDSmax | Drain - Source Voltage | V₍GS₎=0V, I₍D₎=100μA | 1200 | V |
VGSmax | Gate - Source Voltage | Absolute maximum values | -8 / +22 | V |
VGSop | Gate - Source Voltage | Recommended operational values | -5 / +18 | V |
ID | Continuous Drain Current | VGS=18V, TC=25°C | 22 | A |
VGS=18V, TC=100°C | 16 | A | ||
IDM | Pulse Drain Current | Pulse width limited by T₍Jmax₎ | 58 | A |
PD | Power Dissipation | (TC=25°C) | 126 | W |
Derate Above 25°C | 0.84 | W/°C | ||
TJ, TSTG | Operating Junction and Storage Temperature | - | -55 to 175 | °C |
Thermal Characteristics
Symbol | Parameter | Value | Unit |
RθJC | Thermal Resistance, Junction to Case, Max. | 1.19 | °C/W |
RθJA | Thermal Resistance, Junction to Ambient, Max. | 27.47 | °C/W |
Tsold | Soldering temperature, wave soldering only allowed at leads | 260 | °C |
Electrical Characteristics (TJ=25°C, Note1)
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| BVDSS | Drain to Source Breakdown Voltage | VGS= 0 V, ID=100 μA | 1200 | - | - | V |
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID=5.0 mA, TC=25°C | 2.0 | 3.4 | 4.0 | V |
| VGS = VDS, ID=5.0 mA, TC=150°C | - | 2.7 | - | |||
| IDSS | Zero Gate Voltage Drain Current | VDS= 1200 V, VGS= 0 V | - | 10 | 100 | μA |
| IGSS | Gate-Source Leakage Current | VGS= 18 V, VDS= 0 V | - | 10 | 200 | nA |
| RDS(on) | Static Drain to Source On Resistance | VGS= 18 V, ID= 10 A,TC= 25°C | - | 130 | 180 | mΩ |
| VGS= 15 V, ID= 10 A,TC= 25°C | - | 160 | 190 | |||
| VGS= 18 V, ID= 10 A,TC= 150°C | - | 230 | - | |||
| gfs | Transconductance | VGS= 18 V, ID= 10 A,TJ= 25°C | - | 6.2 | - | S |
| VGS= 18 V, ID= 10 A,TJ= 150°C | - | 3.7 | - | |||
| Ciss | Input Capacitance | VGS=0V, VDS=800 V, f=1MHz, VAC=25 mV | - | 818 | - | pF |
| Coss | Output Capacitance | - | 41 | - | ||
| Crss | Reverse Transfer Capacitance | - | 8 | - | ||
| EON | Turn-OnSwitching Energy | VDS=800V, VGS= -5/18V,ID= 10A, RG(ext)= 0Ω, L= 256μH | - | 200 | - | μJ |
| EOFF | Turn-Off Switching Energy | - | 50 | - | ||
| td(on) | Turn-On Delay Time | VDS=800V, VGS= -5/18V,ID= 100A, RG(ext)= 0Ω, Timing relative to VDS | - | 20 | - | ns |
| tr | Rise Time | - | 45 | - | ||
| td(off) | Turn-Off Delay Time | - | 20 | - | ||
| tf | Fall Time | - | 15 | - | ||
| RG(inf) | Internal Gate Resistance | f=1 MHz, VAC=25mV open drain | - | 10.0 | - | Ω |
| Qgs | Gate to Source Charge | VDD=800V, VGS= -5/18V,ID= 10A | - | 9.6 | - | nC |
| Qgd | Gate to Drain Charge | - | 19 | - | ||
| Qg | Total Gate Charge | - | 40 | - |
Reverse Diode Characteristics
Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
VSD | Diode Forward Voltage | VGS=-5 V, ISD=5 A, TJ=25°C | - | 3.7 | - | V |
VGS=-5 V, ISD=5 A, TJ=150°C | - | 3.2 | - | V | ||
IS | Continuous Diode Forward Current | T₍C₎=25°C | - | - | 30 | A |
trr | Reverse Recovery time | VGS=-5V, ISD=10 A, VR=800V, dif /dt=1200A/μs | - | 10 | - | ns |
Qrr | Reverse Recovery Charge | - | 40 | - | nC | |
Irrm | Peak Reverse Recovery Current | - | 3 | - | A |
※. Note 1 : Limited by maximum junction temperature.
Typical Performance Characteristics
Figure1. On-Region Characteristics TJ=25℃
Figure2. On-Region Characteristics TJ=150℃
Figure3. On-Resistance Characteristics vs.Temperature
Figure4. Transfer Characteristics
Figure5. Diode Forward Voltage Characteristics vs. Source-Drain Current TJ=25℃
Figure6.Diode Forward Voltage Characteristics vs. Source-Drain Current TJ=150℃
Figure 7. Threshold Voltage vs. Temperature
Figure 8. Gate Charge Characteristics
Figure9. Stored Energy in Output Capacitance
Figure 10. Capacitance Characteristics
Figure 11. Maximum Power Dissipation Derating vs. Case Temperature
Figure 12. Maximum Safe Operating Area
Figure 13. Transient Thermal Response Curve
Figure 14. Inductive Load Switching Test Circuit and Waveforms
Figure 15. Peak Diode Recovery dv/dt Test Circuit and Waveforms
Package Outlines DFN 8*8
Symbol | Dimensions In Willimeters | ||
Min | Nom | Max | |
D | 7.90 | 8.00 | 8.10 |
E | 7.90 | 8.00 | 8.10 |
D2 | 7.10 | 7.20 | 7.30 |
E2 | 4.25 | 4.35 | 4.45 |
e | 2.00BSC | ||
E3 | 0.75REF | ||
E4 | 2.75REF | ||
Ne | 6.00BSC | ||
b | 0.95 | 1.00 | 1.05 |
A | 0.70 | 0.75 | 0.80 |
c | 0.203REF | ||
A1 | 0 | / | 0.050 |
L | 0.40 | 0.50 | 0.55 |
Package Marking and Ordering Information
Part Number | Top Marking | Package | Packing Method | Quantity |
BCL120N160W1 | BCL120N160W1 | DFN8*8 | Tape & Reel | 5000 units |
