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BCH65S04D4 650V 4A SiC Schottky Diode

BCA6S5D4 utilizes Bestirpower's advanced silicon carbide diode technology. This technology combines the benefits of excellent low forward voltage and robustness. Consequently, the family is suitable for application requiring high power efficiency.
Availability:

Benefits

• High frequency

• Low heat dissipation requirements

• Reduce size and cost of the system

• High-reliability


Applications

• Switch mode power supply

• Solar inverter

• Data Center

• Uninterruptible power supply


Features

VRRM

IF

TC

QC

650 V

4 A

142 °C

7.9

• Negligible reverse recovery

• High-speed switching

• Positive Temperature Coefficient

• Temperature-Independent Switching

• RoHS compliant


BCH65S04D4.1


Absolute Maximum Ratings (TC=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

650

V

IF

Forward Current

TC=25°C

10

A

TC=135°C

5.5

A

TC=142°C

4

A

IF,SM

Non-Repetitive Forward Surge Current

TC=25°C, tp=10 ms

32

A

TC=110°C, tp=10 ms

22

A

IF,SM

Repetitive Peak Forward Surge Current

TC=25°C, tp=10 ms

23

A

I²dt value

∫I²t

TC=25°C, tp=10 ms

5.1

A²s

TC₎=110°C, tp=10 ms

2.6

A²s

Ptot

Power Dissipation

TC=25°C

49

W

TC=110°C

21

W

TC=150°C

8

W

TJ,TSTG

Operating Junction and Storage Temperature

-55 to +175

°C

RθJC Thermal Resistance, Junction to Case, Typ. 3.06 ℃/W


Electrical Characteristics (TC=25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

VDC

DC blocking voltage

-

650

-

-

V

VF

Forward Voltage

IF=4A, TJ=25°C

-

1.4

1.6

V

IF=4A, TJ=175°C

-

1.97

2.2

V

IR

Reverse Current

VR=650V, TJ=25°C

-

1

50

μA

VR=650V, TJ=175°C

-

30

100

μA

QC

Total Capacitive Charge

VR=400V, TJ=25°C

-

7.9

-

nC

C

Total Capacitance

VR=0V, f=1MHz

-

119

-

pF

VR=200V, f=1MHz

-

14.24

-

pF

VR=400V, f=1MHz

-

13.64

-

pF

EC

Capacitance Stored Energy

VR=400V, TC=25°C

-

1.9

-

μJ


Typical Performance Characteristics


Figure-1.-Forward-Characteristics

Figure 1. Forward Characteristics

Figure-2.-Reverse-Characteristics

Figure 2. Reverse Characteristics


Figure-3.-Capacitance-vs.-Reverse-Voltage

Figure 3. Capacitance vs. Reverse Voltage

Figure-4.-Capacitance-Charge-vs.-Reverse-Voltage

Figure 4. Capacitance Charge vs. Reverse Voltage


Figure-5.-Capacitance-Stored-Energy

Figure 5. Capacitance Stored Energy

Figure-6.-Power-Derating

Figure 6. Power Derating


Figure-7.-Current-Derating

Figure 7. Current Derating

Figure-8.-Transient-ThermalImpedance

Figure 8. Transient ThermalImpedance



Package Outlines TO220-2

Package-Outline.1
Package-Outline.2


Package Marking and Ordering Information

Part Number

Top Marking

Package

Packing Method

Quantity

BCH65S04D4

BCH65S04D4

TO220-2

Tube

50 units


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ChipETech Ltd. is a fab-lite semiconductor company based in China. We specialize in next-generation power semiconductor solutions, including chip design, device R&D, production, sales, and application services.

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Tel: +86-17321390308

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