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BCP65N25W1

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Product Description

Benefits

• System efficiency improvement

• Higher frequency applicability

• Increased power density

• Reduced cooling effort

Applications

• Solar inverter / ESS / UPS

• EV charging station

• Server & Telecom power

• Industrial power supply

Features

BV_{DSS, Tc=25℃}	I_{ID, Tc=25℃}	R_DS(on),typ	Q_g,typ
650 V	83.3 A	25 mΩ	124 nC

• High switching speed with a low gate charge

• Fast intrinsic diode with low reverse recovery

• Robust Avalanche Capability

• 100% Avalanche Tested

• Halogen Free, and RoHS Compliant

BCP65N25W1.1

Absolute Maximum Ratings (T_J=25°C unless otherwise noted)

Symbol	Parameter		Value	Unit
V_DSS	Drain to Source Voltage		650	V
V_GS	Gate to Source Voltage (DC)		-13 / +22	V
V_GSop	Recommended Operation Value		-5 / +18	V
I_D	Drain Current	V_GS = 18 V, (T_C = 25℃)	83.3	A
I_D	Drain Current	V_GS = 18 V, (T_C = 100℃)	58.9	A
I_DM	Drain Current	Pulsed (Note1)	350	A
P_D	Power Dissipation	(TC = 25℃)	375	W
P_D	Power Dissipation	Derate Above 25℃	2.5	W/℃
T_J, T_STG	Operating and Storage Temperature Range		-55 to 175	℃

※Note 1 : Limited by maximum junction temperature.

Thermal Characteristics

Symbol	Parameter	Value	Unit
R_θJC	Thermal Resistance, Junction to Case, Max.	0.40	°C/W
R_θJA	Thermal Resistance, Junction to Ambient, Max.	27.55	°C/W
T_sold	Soldering temperature, wave soldering only allowed at leads	260	°C

Electrical Characteristics (T_J=25°C unless otherwise noted)

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
Off Characteristics
BV_DSS	Drain to Source Breakdown Voltage	V_GS= 0 V, ID= 100 uA	650	-	-	V
l_DSS	Zero Gate Voltage Drain Current	V_GS= 650 V, V_GS= 0 V	-	-	100	μA
l_DSS	Zero Gate Voltage Drain Current	V_GS= 650 V, V_GS= 0 V, TJ= 175°C	-	-	3	mA
l_DSS	Gate-Source Leakage Current	V_GS= +20 V, V_GS= 0 V	-	-	+200	nA
l_DSS	Gate-Source Leakage Current	V_GS= -10 V, V_GS= 0 V	-	-	-200	nA
On Characteristics
V_GS(th)	Gate Threshold Voltage	V_GS= VDS, ID= 10 mA	1.6	2.6	3.6	V
R_DS(on)	Static Drain to Source On Resistance	V_GS= 18 V, ID= 20 A	-	25	30	mΩ
R_DS(on)	Static Drain to Source On Resistance	V_GS= 18 V, ID= 20 A, TJ= 175°C	-	45	54	mΩ
g_fs	Transconductance	V_GS= 20 V, ID= 20 A	-	13	-	S
Dynamic Characteristics
C_iss	Input Capacitance	V_GS= 400 V, V_GS= 0V, f= 1 MHz	-	2900	-	pF
C_oss	Output Capacitance		-	185	-
C_iss	Reverse Capacitance		-	10.1	-
E_oss	Stored Energy in Output Capacitance	V_DS= 0 V to 400 V, V_GS= 0 V	-	230	-	μJ
C_o(er)	Energy Related Output Capacitance		-	2875	-	pF
C_o(tr)	Time Related Output Capacitance		-	2870	-	pF
Q_g(tot)	Total Gate Charge	V_DS= 400 V, I_D= 20 A, V_GS= -5 V / 18 V, Inductive load	-	124	-	nC
Q_gs	Gate to Source Charge		-	30	-
Q_gs	Gate to Drain “Miller” Charge		-	20	-
R_G	Internal Gate Resistance	f= 1MHz, V_AC=25mV open drain	-	1.5	-	Ω
Switching Characteristics
t_d(on)	Turn-On Delay Time	V_DS= 400 V, I_D= 20 A, V_GS= -5 V / 18 V, R_G= 5 Ω, FWD : body diode at V_GS=-5V, Inductive load	-	20	-	ns
t_r	Turn-On Rise Time		-	45	-
t_d(off)	Turn-Off Delay Time		-	18	-
t_r	Turn-Off Fall Time		-	10	-
E_on	Turn-on Switching Energy		-	170	-	uJ
E_off	Turn-off Switching Energy		-	90	-
E_tot	Total Switching Energy		-	260	-
Source-Drain Diode Characteristics
I_s	Maximum Continuous Diode Forward Current	-	-	83.3	A
I_SM	Maximum Pulsed Diode Forward Current	-	-	350	A
V_SD	Diode Forward Voltage	V_GS= -5 V, I_SD= 15 A	-	3.2	-	V
t_rr	Reverse Recovery Time	V_DD= 400 V, I_SD= 15 A, dI_F/dt = 1200 A/μs, Includes Q_OSS	-	32	-	ns
Q_rr	Reverse Recovery Charge		-	123	-	nC
I_rrm	Peak Reverse Recovery Current	-	-	10	-	A

Typical Performance Characteristics

Figure 1. On-Region Characteristics T_J = -55℃

Figure 2. On-Region Characteristics T_J = 25℃

Figure 3. On-Region Characteristics T_J = 175℃

Figure 4. On-Resistance Characteristics vs. Temperature

Figure 5. Transfer Characteristics

Figure 6. Diode Forward Voltage Characteristics vs. Source-Drain Current TJ = -55℃

Figure 7. Diode Forward Voltage Characteristics vs. Source-Drain Current T_J = 25℃

Figure 8. Diode Forward Voltage Characteristics vs. Source-Drain Current T_J = 175℃

Figure 9. Threshold Voltage vs. Temperature

Figure 10. Gate Charge Characteristics

Figure 11. Stored Energy in Output Capacitance

Figure 12. Capacitance Characteristics

Figure 13. Maximum Power Dissipation Derating vs. Case Temperature

Figure 14. Maximum Safe Operating Area

Figure 15. Transient Thermal Response Curve

Figure 16. Inductive Load Switching Test Circuit and Waveforms

Figure 17. Peak Diode Recovery dv/dt Test Circuit and Waveforms

Package Outlines TO220-3L

SYMBOL	MIN	NOM	MAX
A	4.37	4.57	4.70
A1	1.25	1.30	1.40
A2	2.20	2.40	2.60
b	0.70	0.80	0.95
b2	1.17	1.27	1.47
c	0.45	0.50	0.60
D	15.10	15.60	16.10
D1	8.80	9.10	9.40
D2	5.50	6.30	7.10
E	9.70	10.00	10.30
E3	7.00	7.80	8.60
e	2.54 BSC
el	5.08
H1	6.25	6.50	6.85
L	12.75	13.50	13.80
L1	-	3.10	3.40
ΦP	3.40	3.60	3.80
Q	2.60	2.80	3.00

* Dimensions in millimeters

Package Marking and Ordering Information

Part Number	Top Marking	Package	Packing Method	Quantity
BCP65N25W1	BCP65N25W1	TO220-3L	Tape & Reel	50 units

Product Description