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BCA65S10D3 650V 10A SiC Schottky Diode

BCA6S510D3 utilizes Bestirpower's advanced silicon carbide diode technology. This technology combines the benefits of excellent low forward voltage and robustness. Consequently, the family is suitable for application requiring high power efficiency.
Availability:

Benefits

• High frequency

• Low heat dissipation requirements

• Reduce size and cost of the system

• High-reliability


Applications

• Switch mode power supply

• Solar inverter

• Data Center

• Uninterruptible power supply


Features

VRRM

IF

TC

QC

650 V

10 A

135 °C

28 nC

• Negligible reverse recovery

• High-speed switching

• Positive temperature coefficient

• Temperature-Independent switching

• RoHS compliant/ Halogen-free


BCA65S10D3.1


Absolute Maximum Ratings (TC=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

VRRM

Repetitive Peak Reverse Voltage

650

V

IF

Forward Current

TC=25°C

40

A

TC=135°C

20

A

TC=162°C

10

A

IF,SM

Non-Repetitive Forward Surge Current

TC=25°C, tp=10 ms

140

A

TC=110°C, tp=10 ms

110

A

IF,SM

Repetitive Peak Forward Surge Current

TC=25°C, tp=10 ms

90

A

I²dt value

∫I²t

TC=25°C, tp=10 ms

42

A²s

TC₎=110°C, tp=10 ms

37

A²s

Ptot

Power Dissipation

TC=25°C

204

W

TC=110°C

88

W

TC=150°C

34

W

TJ,TSTG

Operating Junction and Storage Temperature

-55 to +175

°C

RθJC Thermal Resistance, Junction to Case, Typ. 0.73 ℃/W


Electrical Characteristics (TC=25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

VDC

DC blocking voltage

-

650

-

-

V

VF

Forward Voltage

IF=10A, TJ=25°C

-

1.45

1.7

V

IF=10A, TJ=175°C

-

1.75

-

V

IR

Reverse Current

VR=650V, TJ=25°C

-

2

20

μA

VR=650V, TJ=175°C

-

40

-

μA

QC

Total Capacitive Charge

VR=400V, TJ=25°C

-

28

-

nC

C

Total Capacitance

VR=0V, f=1MHz

-

550

-

pF

VR=200V, f=1MHz

-

53

-

pF

VR=400V, f=1MHz

-

48

-

pF

EC

Capacitance Stored Energy

VR=400V, TC=25°C

-

7.0

-

μJ


Typical Performance Characteristics


Figure-1.-Forward-Characteristics

Figure 1. Forward Characteristics

Figure-2.-Reverse-Characteristics

Figure 2. Reverse Characteristics


Figure-3.-Peak-ForwardCurrent-Derating

Figure 3. Peak ForwardCurrent Derating

Figure-4.-PowerDissipation

Figure 4. PowerDissipation


Figure-5.-Capacitance-vs.-Reverse-Voltage

Figure 5. Capacitance vs. Reverse Voltage

Figure-6.-Capacitance-Charge-vs.-Reverse-Voltage

Figure 6. Capacitance Charge vs. Reverse Voltage

Figure-7.-Transient-Thermal-Impedance

Figure 7. Transient Thermal Impedance


Package Outlines TO247-2

Package-Outlines


COMMON DIMENSIONS

SYMBOL mm
MIN NOM MAX
A 4.80 5.00 5.20
A1 2.21 2.41 2.59
A2 1.85 2.00 2.15
b 1.11 1.21 1.36
b2 1.91 2.01 2.21
c 0.51 0.61 0.75
D 20.70 21.00 21.30
D1 16.25 16.55 16.85
E 15.50 15.80 16.10
E1 13.00 13.30 13.60
E2 4.80 5.00 5.20
E3 2.30 2.50 2.70
e 10.88BSC
L 19.62 19.92 20.22
L1 - - 4.30
ΦP 3.40 3.60 3.80
ΦP1 - - 7.30
S 6.15BSC

* Dimensions in millimeters


Package Marking and Ordering Information

Part Number

Top Marking

Package

Packing Method

Quantity

BCA6S510D3

BCA6S510D3

TO247-2

Tube

30 units


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ChipETech Ltd. is a fab-lite semiconductor company based in China. We specialize in next-generation power semiconductor solutions, including chip design, device R&D, production, sales, and application services.

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