 |
Applications
• PC power.
• Server power supply.
• Telecom.
• Solar invertor.
• Super charger for automobiles.
Features
BVDSS@ TJ,max | ID | RDS(on),max | Qg,typ |
650 V | 20 A | 190 mΩ | 40 nC |
• Ultra-fast body diode.
• Extremely low losses due to very low FOM
• Rdson*Qg and Eoss.
• Very high commutation ruggedness.
Absolute Maximum Ratings (TJ=25°C unless otherwise noted)
Symbol | Parameter | Value | Unit | |
VDSS | Drain to Source Voltage1) | 650 | V | |
| VGS | Gate to Source Voltage | ±30 | V | |
| ID | Drain Current2) | VGS = 10 V, (TC = 25℃) | 20 | A |
VGS = 10 V, (TC = 100℃) | 12 | A | ||
| IDM | Drain Current | Pulsed | 60 | A |
| EAS | Single Pulsed Avalanche Energy3) | 282 | mJ | |
| IAR | Avalanche Current | 7.5 | A | |
| dv/dt | MOSFET dv/dt | 50 | V/ns | |
| Peak Diode Recovery dv/dt4) | 50 | |||
| PD | Power Dissipation | (TC = 25℃) | 34 | W |
| TJ, TSTG | Operating and Storage Temperature Range | -55 to 175 | ℃ | |
| TL | Maximum Lead Temperature for Soldering, 1/8” from Case for 10 Seconds | 260 | ℃ | |
1) Limited by Tj max. Maximum duty cycle D=0.75.
2) Pulse width tp limited by Tj,max.
3) VDD=50V, RG=25Ω, Starting Tj=25°C.
4) VDClink=400V; VDS,peak<V(BR)DSS; identical low side and high side switch with identical RG.
Thermal Characteristics
Symbol | Parameter | Value | Unit |
RθJC | Thermal Resistance, Junction to Case, Max. | 3.67 | °C/W |
| RθJA | Thermal Resistance, Junction to Ambient, Max. | 62.5 | °C/W |
Electrical Characteristics (TJ=25°C unless otherwise noted)
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS= 0 V, ID= 1 mA | 600 | - | - | V |
| lDSS | Zero Gate Voltage Drain Current | VGS= 600 V, VGS= 0 V, TJ = 25℃ | - | - | 1 | μA |
| lGSS | Gate-Source Leakage Current | VGS= +20 V, VGS= 0 V | - | - | ±100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VGS= VDS, ID= 250μA | 2.5 | 3.5 | 4.5 | V |
| RDS(on) | Static Drain to Source On Resistance | VGS= 10 V, ID= 23 A, TJ = 25℃ | - | 160 | 190 | mΩ |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VGS= 0 V, VDS= 50V, f= 250 kHz | - | 1690 | - | pF |
| Coss | Output Capacitance | - | 78 | - | ||
| Crss | Reverse Capacitance | - | 3.3 | - | ||
| Co(tr) | Time Related Output Capacitance1) | VDS = 0 V to 400 V, VGS = 0 V | - | 245 | - | pF |
| Co(er) | Energy Related Output Capacitance2) | - | 50 | - | ||
| Qg(tot) | Total Gate Charge at 10 V | VDD= 400 V, ID = 7 A, VGS = 0 to 10 V | - | 40 | - | nC |
| Qgs | Gate to Source Charge | - | 9 | - | ||
| Qgd | Gate to Drain “Miller” Charge | - | 17 | - | ||
| Vplateau | Gate plateau voltage | - | 6 | - | V | |
| RG | Gate resistance | f=1 MHz , open drain | - | 7 | - | Ω |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 400 V, ID = 7 A, VGS = 10 V | - | 64 | - | ns |
| tr | Turn-On Rise Time | - | 16 | - | ||
| td(off) | Turn-Off Delay Time | - | 55 | - | ||
| tr | Turn-Off Fall Time | - | 14 | - | ||
| Source-Drain Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | VGS = 0 V, IF = 23 A, TJ = 25℃ | - | 0.85 | - | V |
| trr | Reverse Recovery Time | VR = 400 V, IF = 23 A, diF/dt = 100 A/μs | - | 320 | - | ns |
| Qrr | Reverse Recovery Charge | - | 2.5 | - | nC | |
| Irrm | Peak Reverse Recovery Current | - | 14 | - | A | |
1) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400V.
2) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400V.
Typical Performance Characteristics
Figure 1. Power dissipation
Figure 2. Max. transient thermal impedance
Figure 3. Safe operating area
Figure 4. Typ. output characteristics
Figure 5. Typ. output characteristics
Figure 6. Typ. drain-source on-state resistance
Figure 7. Drain-source on-state resistance
Figure 8. Typ. transfer characteristics
Figure 9.Typ. gate charge
Figure 10. Forward characteristics of reverse diode
Figure 11. Drain-source breakdown voltage
Figure 12. Typ. capacitancest
Figure 13. Typ. Coss stored energy
Figure 15. Diode Characteristics
Figure 16. Switching Times
Figure17.UnclampedInductiveLoad
Package Outlines TO247-3
SYMBOL | MIN | NOM | MAX |
E | 10.00 | 10.20 | 10.40 |
A | 4.50 | 4.70 | 4.90 |
A1 | 2.34 | 2.54 | 2.74 |
A2 | 0.65 | 0.85 | 1.30 |
A4 | 2.55 | 2.75 | 2.95 |
c | 0.40 | 0.50 | 0.65 |
d | 15.57 | 15.87 | 16.17 |
| H1 | 6.70REF | ||
| e | 2.54BSC | ||
φP | 3.183REF | ||
L | 12.68 | 13.13 | 13.28 |
L1 | 3.25 | 3.45 | 3.65 |
φP3 | 3.45REF | ||
F3 | 3.10 | 3.30 | 3.50 |
G3 | 1.10 | 1.30 | 1.50 |
61 | 1.05 | 1.20 | 1.35 |
b2 | 0.70 | 0.80 | 0.92 |
* Dimensions in millimeters
Package Marking and Ordering Information
Part Number | Top Marking | Package | Packing Method | Quantity |
BMF60N190C1 | BMF60N190C1 | TO220F-3 | Tube | 350 units |
Applications
• PC power.
• Server power supply.
• Telecom.
• Solar invertor.
• Super charger for automobiles.
Features
BVDSS@ TJ,max | ID | RDS(on),max | Qg,typ |
650 V | 20 A | 190 mΩ | 40 nC |
• Ultra-fast body diode.
• Extremely low losses due to very low FOM
• Rdson*Qg and Eoss.
• Very high commutation ruggedness.
Absolute Maximum Ratings (TJ=25°C unless otherwise noted)
Symbol | Parameter | Value | Unit | |
VDSS | Drain to Source Voltage1) | 650 | V | |
| VGS | Gate to Source Voltage | ±30 | V | |
| ID | Drain Current2) | VGS = 10 V, (TC = 25℃) | 20 | A |
VGS = 10 V, (TC = 100℃) | 12 | A | ||
| IDM | Drain Current | Pulsed | 60 | A |
| EAS | Single Pulsed Avalanche Energy3) | 282 | mJ | |
| IAR | Avalanche Current | 7.5 | A | |
| dv/dt | MOSFET dv/dt | 50 | V/ns | |
| Peak Diode Recovery dv/dt4) | 50 | |||
| PD | Power Dissipation | (TC = 25℃) | 34 | W |
| TJ, TSTG | Operating and Storage Temperature Range | -55 to 175 | ℃ | |
| TL | Maximum Lead Temperature for Soldering, 1/8” from Case for 10 Seconds | 260 | ℃ | |
1) Limited by Tj max. Maximum duty cycle D=0.75.
2) Pulse width tp limited by Tj,max.
3) VDD=50V, RG=25Ω, Starting Tj=25°C.
4) VDClink=400V; VDS,peak<V(BR)DSS; identical low side and high side switch with identical RG.
Thermal Characteristics
Symbol | Parameter | Value | Unit |
RθJC | Thermal Resistance, Junction to Case, Max. | 3.67 | °C/W |
| RθJA | Thermal Resistance, Junction to Ambient, Max. | 62.5 | °C/W |
Electrical Characteristics (TJ=25°C unless otherwise noted)
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS= 0 V, ID= 1 mA | 600 | - | - | V |
| lDSS | Zero Gate Voltage Drain Current | VGS= 600 V, VGS= 0 V, TJ = 25℃ | - | - | 1 | μA |
| lGSS | Gate-Source Leakage Current | VGS= +20 V, VGS= 0 V | - | - | ±100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VGS= VDS, ID= 250μA | 2.5 | 3.5 | 4.5 | V |
| RDS(on) | Static Drain to Source On Resistance | VGS= 10 V, ID= 23 A, TJ = 25℃ | - | 160 | 190 | mΩ |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VGS= 0 V, VDS= 50V, f= 250 kHz | - | 1690 | - | pF |
| Coss | Output Capacitance | - | 78 | - | ||
| Crss | Reverse Capacitance | - | 3.3 | - | ||
| Co(tr) | Time Related Output Capacitance1) | VDS = 0 V to 400 V, VGS = 0 V | - | 245 | - | pF |
| Co(er) | Energy Related Output Capacitance2) | - | 50 | - | ||
| Qg(tot) | Total Gate Charge at 10 V | VDD= 400 V, ID = 7 A, VGS = 0 to 10 V | - | 40 | - | nC |
| Qgs | Gate to Source Charge | - | 9 | - | ||
| Qgd | Gate to Drain “Miller” Charge | - | 17 | - | ||
| Vplateau | Gate plateau voltage | - | 6 | - | V | |
| RG | Gate resistance | f=1 MHz , open drain | - | 7 | - | Ω |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 400 V, ID = 7 A, VGS = 10 V | - | 64 | - | ns |
| tr | Turn-On Rise Time | - | 16 | - | ||
| td(off) | Turn-Off Delay Time | - | 55 | - | ||
| tr | Turn-Off Fall Time | - | 14 | - | ||
| Source-Drain Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | VGS = 0 V, IF = 23 A, TJ = 25℃ | - | 0.85 | - | V |
| trr | Reverse Recovery Time | VR = 400 V, IF = 23 A, diF/dt = 100 A/μs | - | 320 | - | ns |
| Qrr | Reverse Recovery Charge | - | 2.5 | - | nC | |
| Irrm | Peak Reverse Recovery Current | - | 14 | - | A | |
1) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400V.
2) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400V.
Typical Performance Characteristics
Figure 1. Power dissipation
Figure 2. Max. transient thermal impedance
Figure 3. Safe operating area
Figure 4. Typ. output characteristics
Figure 5. Typ. output characteristics
Figure 6. Typ. drain-source on-state resistance
Figure 7. Drain-source on-state resistance
Figure 8. Typ. transfer characteristics
Figure 9.Typ. gate charge
Figure 10. Forward characteristics of reverse diode
Figure 11. Drain-source breakdown voltage
Figure 12. Typ. capacitancest
Figure 13. Typ. Coss stored energy
Figure 15. Diode Characteristics
Figure 16. Switching Times
Figure17.UnclampedInductiveLoad
Package Outlines TO247-3
SYMBOL | MIN | NOM | MAX |
E | 10.00 | 10.20 | 10.40 |
A | 4.50 | 4.70 | 4.90 |
A1 | 2.34 | 2.54 | 2.74 |
A2 | 0.65 | 0.85 | 1.30 |
A4 | 2.55 | 2.75 | 2.95 |
c | 0.40 | 0.50 | 0.65 |
d | 15.57 | 15.87 | 16.17 |
| H1 | 6.70REF | ||
| e | 2.54BSC | ||
φP | 3.183REF | ||
L | 12.68 | 13.13 | 13.28 |
L1 | 3.25 | 3.45 | 3.65 |
φP3 | 3.45REF | ||
F3 | 3.10 | 3.30 | 3.50 |
G3 | 1.10 | 1.30 | 1.50 |
61 | 1.05 | 1.20 | 1.35 |
b2 | 0.70 | 0.80 | 0.92 |
* Dimensions in millimeters
Package Marking and Ordering Information
Part Number | Top Marking | Package | Packing Method | Quantity |
BMF60N190C1 | BMF60N190C1 | TO220F-3 | Tube | 350 units |
