Cuijin's SiC MOSFETs feature optimized cell structure for enhanced avalanche resistance; low device losses make them suitable for high-frequency operation in energy storage systems. They exhibit low threshold drift and good consistency in parameters such as threshold voltage, on-resistance, and switching losses, resulting in minimal current sharing differences in high-power energy storage systems with parallel applications. Our SiC Diodes also boast superior reverse recovery characteristics, low forward voltage drop, and low losses; our devices effectively improve the efficiency and power density of energy storage systems.
Application Schematic Diagram
Typical Topology Diagram
SiC MOSFET
Product | Package | VDSmax | RDS(on) typ | VGS(th) max | ID @25℃ max | QG | Ciss | Coss |
BCZ120N21M1 | TO247-4 | 1200V | 21mΩ | 4.5V | 100A | 198nC | 3741pF | 224pF |
BCW120N21M1 | TO247-3 | 1200V | 21mΩ | 4.5V | 100A | 209nC | 3683pF | 225pF |
BCZ120N40M1 | TO247-4 | 1200V | 40mΩ | 4.5V | 60A | 109nC | 1960pF | 125pF |
BCZ120N80M1 | TO247-4 | 1200V | 80mΩ | 4.5V | 30A | 52nC | 880pF | 64pF |
BCW120N80M1 | TO247-3 | 1200V | 80mΩ | 4.5V | 30A | 50nC | 885pF | 65pF |
BCBF120N80M1 | TO263-7 | 1200V | 80mΩ | 4.5V | 30A | 50nC | 880pF | 64pF |
Topology Diagram (Bidirectional DC-DC)
SiC MOSFET
Product | Package | VDSmax | RDS(on) typ | VGS(th) max | ID @25℃ max | QG | Ciss | Coss |
BCZ120N21M1 | TO247-4 | 1200V | 21mΩ | 4.5V | 100A | 198nC | 3741pF | 224pF |
BCW120N21M1 | TO247-3 | 1200V | 21mΩ | 4.5V | 100A | 209nC | 3683pF | 225pF |
BCZ120N40M1 | TO247-4 | 1200V | 40mΩ | 4.5V | 60A | 109nC | 1960pF | 125pF |
BCZ120N80M1 | TO247-4 | 1200V | 80mΩ | 4.5V | 30A | 52nC | 880pF | 64pF |
BCW120N80M1 | TO247-3 | 1200V | 80mΩ | 4.5V | 30A | 50nC | 885pF | 65pF |
BCBF120N80M1 | TO263-7 | 1200V | 80mΩ | 4.5V | 30A | 50nC | 880pF | 64pF |
