Cuijin's SiC MOSFETs feature an optimized cell structure, resulting in low conduction losses, low switching losses, and high switching frequencies, perfectly suited for the high-frequency applications of induction heating. Our SiC Diodes exhibit excellent reverse recovery performance, low forward voltage drop, and low losses. At a junction temperature of 175℃, our devices demonstrate good stability in parameters such as threshold voltage, on-resistance, and switching losses, with low conduction losses, making them suitable for the high-temperature applications of induction heating.
Application Schematic Diagram
Typical Topology Diagram
SiC MOSFET
Product | Package | VDSmax | RDS(on) typ | VGS(th) max | ID @25℃ max | QG | Ciss | Coss |
BCZ120N80M1 | TO247-4 | 1200V | 80mΩ | 4.5V | 30A | 52nC | 880pF | 64pF |
BCW120N80M1 | TO247-3 | 1200V | 80mΩ | 4.5V | 30A | 50nC | 885pF | 65pF |
BCBF120N80M1 | TO263-7 | 1200V | 80mΩ | 4.5V | 30A | 50nC | 880pF | 64pF |
Typical Topology Diagram (Industrial)
SiC MOSFET
Product | Package | VDSmax | RDS(on) typ | VGS(th) max | ID @25℃ max | QG | Ciss | Coss |
BCZ120N21M1 | TO247-4 | 1200V | 21mΩ | 4.5V | 100A | 198nC | 3741pF | 224pF |
BCW120N21M1 | TO247-3 | 1200V | 21mΩ | 4.5V | 100A | 209nC | 3683pF | 225pF |
BCZ120N40M1 | TO247-4 | 1200V | 40mΩ | 4.5V | 60A | 109nC | 1960pF | 125pF |
SiC Diode
Product | Package | VRRM | IF | IFSM | VF typ | VF max | IR max | QC |
BCA120S010D2 | TO247-2 | 1200V | 10A | 59A | 1.43V | 1.7V | 60uA | 52nC |
BCA120S015D1 | TO247-2 | 1200V | 15A | 106A | 1.39V | 1.7V | 100uA | 92nC |
BCA120S020D1 | TO247-2 | 1200V | 20A | 135A | 1.39V | 1.7V | 100uA | 121nC |
BCA120S030D2 | TO247-2 | 1200V | 30A | 195A | 1.5V | 1.7V | 100uA | 174nC |
