Cuijin's SiC MOSFETs feature an optimized cell structure, resulting in low conduction losses, low switching losses, and high switching frequencies, perfectly suited for the high-frequency applications and high power density characteristics of hydrogen fuel cell air compressors. Our devices are rigorously tested according to AEC® Q101 standards, demonstrating excellent stability in parameters such as threshold voltage, on-resistance, and switching losses. The low conduction losses make them suitable for harsh operating environments such as high temperatures.
Application Schematic Diagram
Typical Topology Diagram
SiC MOSFET
Product | Package | VDSmax | RDS(on) typ | VGS(th) max | ID @25℃ max | QG | Ciss | Coss |
BCZ120N21M1 | TO247-4 | 1200V | 21mΩ | 4.5V | 100A | 198nC | 3741pF | 224pF |
BCZ120N40M1 | TO247-4 | 1200V | 40mΩ | 4.5V | 60A | 109nC | 1960pF | 125pF |
SiC Diode
Product | Package | VRRM | IF | IFSM | VF typ | VF max | IR max | QG |
BCA120S020D1 | TO247-2 | 1200V | 20A | 135A | 1.39V | 1.7V | 100uA | 121nC |
BCH120S020D1 | TO220-2 | 1200V | 20A | 135A | 1.39V | 1.7V | 100uA | 121nC |
BCA120S020D2 | TO247-2 | 1200V | 20A | 110A | 1.45V | 1.7V | 150uA | 98nC |
BCW120D030D1 | TO247-3 | 1200V | 30A | 106A | 1.39V | 1.7V | 100uA | 92nC |
BCA120S030D2 | TO247-2 | 1200V | 30A | 195A | 1.5V | 1.7V | 150uA | 174nC |
BCA120S040D1 | TO247-2 | 1200V | 40A | 225A | 1.39V | 1.7V | 100uA | 241nC |
BCW120D040D1 | TO247-3 | 1200V | 40A | 106A | 1.39V | 1.7V | 100uA | 92nC |
BCA120S040D2 | TO247-2 | 1200V | 40A | 249A | 1.5V | 1.7V | 150uA | 213nC |
