Cuijin's SiC MOSFETs feature optimized cell structure, resulting in low conduction loss, low switching loss, high switching frequency, and good stability of parameters such as threshold voltage, on-resistance, and switching loss under high-temperature conditions. The low conduction loss aligns with the high-efficiency and energy-saving requirements of HVAC systems, effectively improving the power density, energy efficiency rating, and reliability of HVAC systems.
Application Schematic Diagram
Typical Topology Diagram
SiC MOSFET
Product | Package | VDSmax | RDS(on) typ | VGS(th) max | ID @25℃ max | QG | Ciss | Coss |
BCZ120N40M1 | TO247-4 | 1200V | 40mΩ | 4.5V | 60A | 109nC | 1960pF | 125pF |
BCZ120N80M1 | TO247-4 | 1200V | 80mΩ | 4.5V | 30A | 52nC | 880pF | 64pF |
BCW120N80M1 | TO247-3 | 1200V | 80mΩ | 4.5V | 30A | 50nC | 885pF | 65pF |
BCBF120N80M1 | TO263-7 | 1200V | 80mΩ | 4.5V | 30A | 50nC | 880pF | 64pF |
