APPLICATION
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Direct Current Inverter Welding Machine

The Utility Power output after AC/DC/AC conversion, save the bulky 50Hz power frequency transformer, compared with the traditional welding machine, inverter welding machine not only has a small size and light weight, but also can provide DC arc, and the arc combustion output of inverter welding machine is particularly stable, the workpiece welding quality is good.


Application-schematic-diagram

Application Schematic Diagram

Typical-topology-diagram

Typical Topology Diagram


SJ MOSFET • Suitable For Low Power

Product

Package

VDSmax

RDS

(on) typ

VGS

(th) max

ID @25℃ max

QG

Ciss

Coss

BMZ60N028E1

TO247–4

600V

28mΩ

4.5V

75A

186nC

8100pF

201pF

BMW60N040E1

TO247–3

600V

40mΩ

4.5V

67A

133.4nC

5657pF

136.5pF

BMW60N070E1

TO247–3

600V

70mΩ

4.5V

43A

75nC

3208pF

81pF

BMS60N070E1

DFN5*6

600V

70mΩ

4.5V

43A

75nC

3208pF

81pF


SiC Diode • Suitable For Low Power

Product

Package

VRRM

IF

IFSM

VF typ

VF max

IR max

QG

BCH65S10D1

TO220-2

650V

10A

55A

1.3V

1.6V

100uA

39nC

BCH65S10D2

TO220-2

650V

10A

96A

1.37V

1.6V

100uA

30nC

BCL65S010D2

DFN8*8

650V

10A

67A

1.37V

1.6V

60uA

30nC

BCH65S016D2

TO220-2

650V

16A

128A

1.43V

1.6V

100uA

62nC

BCA65S20D1

TO247-2

650V

20A

97A

1.3V

1.5V

100uA

77nC

BCH65S20D2

TO220-2

650V

20A

170A

1.35V

1.7V

60uA

62nC


SiC MOSFET • Suitable For High Power

Product

Package

VDSmax

RDS(on) typ

VGS(th) max

ID @25℃ max

QG

Ciss

Coss

BCZ120N80M1

TO247-4

1200v

80mΩ

4.5V

30A

52nC

880pF

64pF

BCW120N80M1

TO247-3

1200v

80mΩ

4.5V

30A

50nC

885pF

65pF

BCBF120N80M1

TO263-7

1200v

80mΩ

4.5V

30A

50nC

880pF

64pF


SiC Diode • Suitable For High Power

Product

Package

VRRM

IF

IFSM

VF typ

VF max

IR max

QG

BCA120S010D2

TO247-2

1200V

10A

59A

1.43V

1.7V

60uA

52nC

BCA120S015D1

TO247-2

1200V

15A

106A

1.39V

1.7V

100uA

92nC

BCA120S015D2

TO247-2

1200V

15A

100A

1.43V

1.7V

100uA

83nC

BCA120S020D1

TO247-2

1200V

20A

135A

1.39V

1.7V

100uA

121nC

BCH120S020D1

TO220-2

1200V

20A

135A

1.39V

1.7V

100uA

121nC

BCA120S020D2

TO247-2

1200V

20A

110A

1.45V

1.7V

150uA

98nC

BCA120S030D2

TO247-2

1200V

30A

195A

1.5V

1.7V

150uA

174nC

BCW120D030D1

TO247-3

1200V

30A

106A

1.39V

1.7V

100uA

92nC

BCA120S040D2

TO247-2

1200V

40A

249A

1.5V

1.7V

150uA

213nC

BCA120S040D1

TO247-2

1200V

40A

225A

1.39V

1.7V

100uA

241nC

BCW120D040D1

TO247-3

1200V

40A

106A

1.39V

1.7V

100uA

92nC


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Our product portfolio includes 600V to 2000V platforms in Si (Silicon) and SiC (Silicon Carbide). We offer SiC diodes, MOSFETs, and modules, SJ (Super Junction) MOSFETs, IGBT discrete devices and modules, HV MOSFETs, and more.
ChipETech Ltd. is a fab-lite semiconductor company based in China. We specialize in next-generation power semiconductor solutions, including chip design, device R&D, production, sales, and application services.

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