The SiC MOSFET developed by Cuijin optimizes the cell structure, enhances avalanche resistance, reduces conduction losses, improves switching efficiency, balances the gate charge ratio, and exhibits superior body diode characteristics. It is suitable for high-frequency operating modes, effectively reducing the size of magnetic components in the power supply module, and fully meets the application requirements of high precision, high efficiency, and high power density in battery formation systems.
Application Schematic Diagram
Typical Topology Diagram
SiC MOSFET
Product | Package | VDSmax | RDS(on) typ | VGS(th) max | ID @25℃ max | QG | Ciss | Coss |
BCZ120N21M1 | TO247-4 | 1200V | 21mΩ | 4.5V | 100A | 198nC | 3741pF | 224pF |
BCW120N21M1 | TO247-3 | 1200V | 21mΩ | 4.5V | 100A | 209nC | 3683pF | 225pF |
BCZ120N40M1 | TO247-4 | 1200V | 40mΩ | 4.5V | 60A | 109nC | 1960pF | 125pF |
BCZ120N80M1 | TO247-4 | 1200V | 80mΩ | 4.5V | 30A | 52nC | 880pF | 64pF |
BCW120N80M1 | TO247-3 | 1200V | 80mΩ | 4.5V | 30A | 50nC | 885pF | 65pF |
BCBF120N80M1 | TO263-7 | 1200V | 80mΩ | 4.5V | 30A | 50nC | 880pF | 64pF |
