Cuijin's SiC MOSFETs enhance avalanche resistance through optimized cell structure. They exhibit low conduction losses, low switching losses, and fast switching speeds, meeting the requirements for fast dynamic response of the APF (Active Power Factor). Our SiC Diodes possess excellent reverse recovery characteristics, low forward voltage drop, and low losses. At a junction temperature of 175℃, our devices demonstrate good stability in parameters such as threshold voltage, on-resistance, and switching losses, effectively improving the reliability and performance of the APF.
Application Schematic Diagram
Typical Topology Diagram
SiC MOSFET
Product | Package | VDSmax | RDS(on) typ | VGS(th) max | ID @25℃ max | QG | Ciss | Coss |
BCZ120N21M1 | TO247-4 | 1200V | 21mΩ | 4.5V | 100A | 198nC | 3741pF | 224pF |
BCW120N21M1 | TO247-3 | 1200V | 21mΩ | 4.5V | 100A | 209nC | 3683pF | 225pF |
BCZ120N40M1 | TO247-4 | 1200V | 40mΩ | 4.5V | 60A | 109nC | 1960pF | 125pF |
BCZ120N80M1 | TO247-4 | 1200V | 80mΩ | 4.5V | 30A | 52nC | 880pF | 64pF |
BCW120N80M1 | TO247-3 | 1200V | 80mΩ | 4.5V | 30A | 50nC | 885pF | 65pF |
BCBF120N80M1 | TO263-7 | 1200V | 80mΩ | 4.5V | 30A | 50nC | 880pF | 64pF |
