Views: 0 Author: Site Editor Publish Time: 2026-03-04 Origin: Site
Silicon Carbide Devices Drive the Charging Pile Revolution, Enabling Fast Charging of Electric Vehicles with Cost Reduction and Efficiency Improvement
The electrification of automobiles is now a global consensus, leading to explosive growth in the charging pile industry. Simultaneously, silicon carbide power devices, as a third-generation power semiconductor technology, are poised for large-scale application in the charging pile industry due to their advantages such as high voltage resistance, high switching frequency, and high temperature resistance.
With this massive market potential, charging modules themselves face several technical challenges: how to ensure reliability in harsh environments; how to improve overall efficiency to reduce operator costs; how to increase charging power within limited land area; and how to improve charging speed to reduce charging anxiety for car owners. To address these pain points in the charging industry, more and more power electronics engineers are seeking third-generation power semiconductor silicon carbide solutions.
To improve the power density of charging modules, shorten charging time, and enhance energy conversion efficiency, Cuijin Semiconductor, one of the earliest entrants into the silicon carbide field in China, has launched a series of silicon carbide solutions for the charging pile industry.
Recommended Solution
Application Schematic Diagram
Classic topology graph
0KW Charging Module
SiC MOSFET Solution
Product | Package | VDSmax | RDS(on) | VGS(th) | ID @25°C | QG | Ciss | Coss |
BCZ120N40M1 | TO247-4 | 1200V | 40mΩ | 4.5V | 60A | 109nC | 1960pF | 125pF |
SiC Diode Solution
Product | Package | VRRM | IF | IFSM | VF typ | VF max | IR max | QG |
BCA120S020D1 | TO247-2 | 1200V | 20A | 135A | 1.39V | 1.7V | 100uA | 121nC |
BCH120S020D1 | TO220-2 | 1200V | 20A | 135A | 1.39V | 1.7V | 100uA | 121nC |
BCA120S020D2 | TO247-2 | 1200V | 20A | 110A | 1.45V | 1.7V | 150uA | 98nC |
40KW Charging Module
SiC MOSFET Solution
Product | Package | VDSmax | RDS(on) | VGS(th) | ID @25°C | QG | Ciss | Coss |
BCZ120N40M1 | TO247-4 | 1200V | 40mΩ | 4.5V | 60A | 109nC | 1960pF | 125pF |
SiC Diode Solution
Product | Package | VRRM | IF | IFSM | VF typ | VF max | IR max | QG |
BCW120D030D1 | TO247-3 | 1200V | 30A | 106A | 1.39V | 1.7V | 100uA | 92nC |
BCA120S030D2 | TO247-2 | 1200V | 30A | 195A | 1.5V | 1.7V | 150uA | 174nC |
Cuijin Semiconductor SiC MOSFET Advantages
Lower FOM
Increased power density
Reduced cooling workload
Higher system reliability and stability
Fast body diode
Strong avalanche resistance
Low forward voltage
Higher frequency applicability
Higher system efficiency
Low eoss energy loss
Extremely low switching losses
Fast switching speed, small chip area, low switching noise
Small change in Rds(on) amplitude with increasing temperature
Strong avalanche resistance, able to withstand larger inrush currents
High-quality substrate, high-quality gate oxide growth technology
Cuijin Semiconductor SiC Diode Advantages
Low forward voltage
Low reverse recovery current
Maximum junction temperature of 175℃
High inrush current capability
Reverse recovery current, unaffected by turn-off speed and junction temperature
Quality Assurance
To ensure the reliability of our products, 100% of our products undergo wafer-level aging and finished product-level aging tests before shipment. The aging test process uses optimized formulations. Advanced SiC MOSFET technology combined with a vertically integrated supply chain strategy ensures that our product performance, cost structure, and supply capacity are competitive in the market.
About Cuijin Semiconductor
Cuijin Semiconductor was founded by dozens of experts from well-known domestic and international semiconductor manufacturers, with over 20 years of experience in design, process, application, manufacturing, and marketing. The company specializes in the R&D, production, sales, and application services of power devices. In collaboration with technical teams and chip foundry resources in South Korea, Japan, and China, the company's products mainly include discrete devices ranging from 600V to 2000V, such as silicon carbide (SiC) MOSFETs and silicon-based superjunction (SiSJ) MOSFETs. These devices are primarily used in new energy fast charging piles, photovoltaics, energy storage, wind power, industrial drives, and new energy passenger vehicles.
The company has its management headquarters in Shanghai, a "Power Electronics Application Center" in Xi'an, and sales centers in Shenzhen, Nanjing, and Ningbo. Its manufacturing base is located in Cixi High-tech Zone, Ningbo, a major industrial manufacturing center in the Yangtze River Delta, where a 42,000-square-meter power chip manufacturing plant is under construction.
For more details, please visit: www.bestirpower.com
Sample request: +86-21-51097108, +86-17321390308
